Partial oxidation of ethane initiated by irradiation of ArF excimer laser.
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چکیده
منابع مشابه
control of the optical properties of nanoparticles by laser fields
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15 صفحه اولTunable ArF excimer-laser source.
A tunable ArF* (193-nm) excimer source is described that produces over 125 mJ/pulse (peak) at 10 pulses/sec. This device has a spectral width of less than 2 cm(-1) and a demonstrated tunability of nearly 320 cm(-1) from 192.8 to 193.9 nm. Tunability, bandwidth, and mode control are achieved by injecting the fourth anti-Stokes line (in H(2)) of a frequency-doubled dye laser into an ArF* excimer-...
متن کاملArF Excimer Laser Annealing of Polycrystalline Silicon Thin Film
Crystallization of amorphous silicon (a-Si) using excimer laser annealing (ELA) has been reported since 1994 by Watanabe group. It is known as the best method to fabricate a good poly-silicon because it can heat the film up to the melting point and, at the same time no thermal damage occur into the glass substrate (Carluccio et al., 1997; Matsumura and Oh, 1999). ELA technique is widely used to...
متن کاملEffect of the ArF excimer laser on human enamel.
Human enamel surface was irradiated with ArF excimer laser and examined under light microscopy and scanning electron microscopy (SEM). Enamel surface was irradiated at three different areas with different energy fluences. It is demonstrated that the ArF excimer laser causes ablation of the calcified hard enamel tissue. Ablation curves were measured. There was no significant difference found in ...
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ژورنال
عنوان ژورنال: NIPPON KAGAKU KAISHI
سال: 1989
ISSN: 2185-0925,0369-4577
DOI: 10.1246/nikkashi.1989.888